language: en

Massively Parallel Computation for Three-Dimensional Monte Carlo Semiconductor Device Simulation

Henry Sheng, Roberto Guerrieri and Alberto Sangiovanni-Vincentelli
Department of Electrical Engineering and Computer Sciences University of California,
Berkeley, CA 94720, U.S.A.
Dipartimento di Elettronica e Informatica Universita di Bologna, Italy

Abstract This work presents a study of the applicability of a massively parallel computing paradigm to Monte Carlo techniques for device simulation. A unique mapping of Monte Carlo to SIMD fine-grained parallelism has been developed, decoupling the problem into separate computational domains. For MOSFET simulation, this novel mapping allows estimated speeds of over 200,000 scatterings processed per second on a 65,536 processor Connection Machine, nearly a factor of six over the fastest known to date.

1 Introduction