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Kinetics of the Solid State Reaction between CuO and WO

and WO, M. Lazzari, L. Peraldo Bicelli, and B. Rivolta
Centra di Studio sui Processi Elettrodici del C.N.R., Istituto di Chimica Fisica, Elettrochimica e Metallurgia del Politecnico,
Milan , Italy
Z. Naturforsch. 85 a, 332—335 (1980);

[received November 24 1979]

The solid state reaction of CH1WO4-X formation from CuO and WO3 was studied by the contact method in air and nitrogen. The results showed that the reaction is governed by the diffusion of the W*+ and 02~ ions and that the rate determining step is the diffusion of oxygen ions in the reaction product. This is in agreement with the defect structure of copper tungstate, an n-type semiconductor with oxygen vacancies through which the diffusion process is possible.

The formation of the tungstates of magnesium